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| SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTC4511. A U E KTA1725 EPITAXIAL PLANAR PNP TRANSISTOR C S T L L CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25... ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -80 -80 -6 -6 -3 30 150 -55150 UNIT V V V A A W ... ... O D D N T N T Q 1 2 3 J MAXIMUM RATING (Ta=25... ) M DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 2.70ae0.30 D 0.85 MAX E *' 3.20ae0.20 F 3.00ae0.30 12.30 MAX G 0.75 MAX RH 13.60ae0.50 J K 3.90 MAX L 1.20 1.30 M V N 2.54 4.50ae0.20 O P 6.80 2.60ae0.20 Q R 10 H S 25 5 T U 0.5 V 2.60ae0.15 F G B K 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25... ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification R:55~110, SYMBOL ICBO IEBO V(BR)CEO hFE(Note) VCE(sat) fT Cob O:80~160. TEST CONDITION VCB=-80V, IE=0 VEB=-6V, IC=0 IC=-25mA, IB=0 VCE=-4V, IC=-2A IC=-2A, IB=-0.2A VCE=-12V, IC=-0.5A VCB=-10V, IE=0, f=1MHz MIN. -80 55 TYP. 20 150 MAX. -10 -10 160 -0.5 V MHz pF UNIT *IA *IA V 2002. 6. 5 Revision No : 0 P 1/3 KTA1725 I C - VCE COLLECTOR CURRENT I C (A) 2 =- VCE(sat) - I B I C =-100mA I =-80mA C A 0m mA -15 00 IC = IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -6 -3 -4 I C =-50mA I C =-30mA -2 -2 I C =-20mA I C =-10mA -1 I C=-6A I C=-2A I C=-4A 0 0 0 -0.5 -1.0 -1.5 BASE CURRENT I B (A) 0 -1 -2 -3 -4 COLLECTOR-EMITTER VOLTAGE VCE (V) I C - V BE -6 COLLECTOR CURRENT I C (A) V CE =-4V h FE - I C 1k DC CURRENT GAIN h FE 500 300 Tc=125 C Tc=25 C VCE =-4V -4 100 50 30 Tc=-30 C Tc =1 25 C 0 0 -1 BASE-EMITTER VOLTAGE VBE (V) -1.5 Tc= -3 0 Tc =2 5 C -2 C 10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR CURRENT I C (A) h FE - I C 1k VCE =-4V DC CURRENT GAIN h FE 500 300 Tc=125 C Tc=25 C Tc=-30 C R th - t TRANSIENT THERMAL RESISTANCE r th ( C/W) 1k 1 NO HEAT SINK 2 INFINITE SINK 100 1 100 50 30 10 2 1 10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 0.1 0.001 0.01 0.1 1 TIME t (S) 10 100 1k COLLECTOR CURRENT I C (A) 2002. 6. 5 Revision No : 0 2/3 KTA1725 fT - IE 30 CUT-OFF FREQUENCY f T (MHz) VCE =-12V SAFE OPERATING AREA -30 COLLECTOR CURRENT IC (A) -10 -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -3 I C MAX.(PULSED) 20 C 25 =1 Tc 5 C =2 Tc C 0 =-3 Tc 100ms* DC (T c= 25 10 ms * C) 10 0 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 EMITTER CURRENT I E (A) *SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -10 -30 -100 - 300 COLLECTOR-EMITTER VOLTAGE VCE (V) Pc - Ta MAXIMUM POWER DISSIPATION PC (W) -40 -30 -25 -20 -15 -10 -5 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) (2) (1) (1)Tc=Ta INFINITE HEAT SINK (2)NO HEAT SINK 2002. 6. 5 Revision No : 0 3/3 |
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